IRFZ24N N-Channel Enhancement Mode TrenchMOS Transistor
SKU : IRFZ24N
| Price |
18.00 ฿ |
| Quantity to buy | |
| Total | 18.00 ฿ |
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Type Designator: IRFZ24N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 45 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 17 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 13.3 nC
Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm
Part No : ELE-CH061052055
