IRFD120 Power MOSFET

SKU : IRFD120

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24.00 ฿

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Type Designator: IRFD120


Type of Transistor: MOSFET


Type of Control Channel: N -Channel


Maximum Power Dissipation (Pd): 1.3 W


Maximum Drain-Source Voltage |Vds|: 100 V


Maximum Gate-Source Voltage |Vgs|: 20 V


Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V


Maximum Drain Current |Id|: 0.94 A


Maximum Junction Temperature (Tj): 150 °C


Total Gate Charge (Qg): 16 nC


Drain-Source Capacitance (Cd): 360 pF


Maximum Drain-Source On-State Resistance (Rds): 0.27 Ohm


Part No : ELE-CH061052074

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