IRF530A Advanced Power Mosfet

SKU : IRF530A

Type Designator: IRF530A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 55 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 14 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 27 nC

Drain-Source Capacitance (Cd): 610 pF

Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm

Part No : ELE-CH061062171