IRF510 N-Chennel Enhancement-Mode Vertical DMOS Power Fets
SKU : IRF510
35.00 ฿
Out of stock
Type Designator: IRF510
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 20 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 5.6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 8.3 nC
Maximum Drain-Source On-State Resistance (Rds): 0.54 Ohm
Part No : ELE-CH061051727
